|
|
Datasheet 2SK3159 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SK3159 | Silicon N Channel MOS FET 2SK3159
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 23 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
D S
REJ03G1084-0400 Rev.4.00
M |
Renesas |
|
1 | 2SK3159 | Silicon N Channel MOS FET High Speed Power Switching 2SK3159
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-774 (Z) Target Specification 1st. Edition February 1999 Features
• Low on-resistance R DS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
D
G
1
S
2
3
1. Gate |
Hitachi Semiconductor |
Esta página es del resultado de búsqueda del 2SK3159. Si pulsa el resultado de búsqueda de 2SK3159 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |