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Datasheet 2SK266 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2SK266 | (2SKxxx) Dual Transistors |
 Toshiba |
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| 9 | 2SK2661 | Silicon N Channel MOS Type Field Effect Transistor 2SK2661
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSV)
2SK2661
Chopper Regulator, DC–DC Converter and Motor Drive Applications
Unit: mm
z Low drain–source ON resistance : RDS (ON) = 1.35 Ω (typ.)
z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
z Low leaka |
 Toshiba Semiconductor |
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| 8 | 2SK2662 | Silicon N Channel MOS Type Field Effect Transistor 2SK2662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2662
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance
: RDS (ON) = 1.35 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
z Low leakage c |
Toshiba Semiconductor |
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| 7 | 2SK2663 | HVX-2 Series Power MOSFET(900V 1A) SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2663
( F1E90HVX2 )
900V 1A
FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. •œ Avalanche resistance guarante |
 Shindengen Electric Mfg.Co.Ltd |
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