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Datasheet 2SK2595 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK2595 | Silicon N-Channel MOS FET UHF Power AMplifier
2SK2595
Silicon N-Channel MOS FET UHF Power Amplifier
REJ03G0206-0300 Rev.3.00 Aug.26.2004
Features
• High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. (f = 836.5 MHz) • Compact package capable of surface mounting
Outline
RP8P D G 1
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 Renesas Technology |
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| 1 | 2SK2595 | Silicon N-Channel MOS FET UHF Power Amplifier
2SK2595
Silicon N-Channel MOS FET UHF Power Amplifier
1st. Edition Features
• High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting
Outline
This Device is sensitive to Elector |
 Hitachi Semiconductor |
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