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Datasheet 2SK259 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | 2SK259 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK259
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed especially for high voltage,high speed applications
ABSOLUTE MAXIMUM RAT |
 Inchange Semiconductor |
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| 10 | 2SK2590 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2590
DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control
ABSOLUTE MAXIMUM RATINGS(T |
Inchange Semiconductor |
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| 9 | 2SK2590 | Silicon N Channel MOS FET 2SK2590
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter, motor control
Outline
RENESAS Package code: PRSS0004AC-A (Package n |
 Renesas |
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| 8 | 2SK2590 | Silicon N-Channel MOS FET 2SK2590
Silicon N-Channel MOS FET
Preliminary
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control
Outline
TO-220AB
D G
1
2
3 1. Ga |
 Hitachi Semiconductor |
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