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Datasheet 2SK2569 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SK2569 | Silicon N-Channel MOS FET 2SK2569
Silicon N-Channel MOS FET
ADE-208-384 1st. Edition
Application
Low frequency power switching
Features
• • • • Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK).
Outline
MPAK
3 1 2 D 1. Source 2. Gate 3. Drain
G
S
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Hitachi Semiconductor |
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1 | 2SK2569 | Silicon N Channel MOS FET 2SK2569
Silicon N Channel MOS FET
REJ03G1018-0300 Rev.3.00 Dec 27, 2006
Application
High speed power switching
Features
• • • • Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A ( |
Renesas |
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Número de pieza | Descripción | Fabricantes | |
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