Datasheet 2SK2553S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK2553S	Silicon N Channel MOS FET High Speed Power Switching 2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition February 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source	Hitachi Semiconductor

2SK25 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK2545	FET Silicon N Channel Mos Type(for High speed/ High Voltage Switching) 2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2545 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.9 Ω(	Toshiba Semiconductor
2SK2541	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING	NEC
2SK2543	Silicon N Channel MOS Type Field Effect Transistor 2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2543 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 7.0 S (typ.) l Low leakage current :	Toshiba Semiconductor

Esta página es del resultado de búsqueda del 2SK2553S. Si pulsa el resultado de búsqueda de 2SK2553S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap