Datasheet 2SK2467-Y Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK2467-Y	N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)	Toshiba Semiconductor

2SK246 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK246	Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications 2SK246 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max)	Toshiba Semiconductor
2SK246	N-CHANNEL JUNCTION TYPE Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications 2SK246 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max)	Toshiba Semiconductor
2SK2461	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2	NEC

Esta página es del resultado de búsqueda del 2SK2467-Y. Si pulsa el resultado de búsqueda de 2SK2467-Y se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap