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Datasheet 2SK2467 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK2467 | N-CHANNEL MOS TYPE TRANSISTOR TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2467
2SK2467
High-Power Amplifier Application
• High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 4.0 S (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
D |
 Toshiba Semiconductor |
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| 1 | 2SK2467-Y | N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
Toshiba Semiconductor |
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