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Datasheet 2SK217 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | 2SK217 | Silicon N-Channel Junction FET 2SK217
Silicon N-Channel Junction FET
Application
VHF amplifier
Outline
MPAK
3 1 2
1. Gate 2. Drain 3. Source
2SK217
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain current Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO ID IG Pc |
Hitachi Semiconductor |
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6 | 2SK2170 | N-Channel Junction Silicon FET Ordering number : ENN4858A
2SK2170
2SK2170 N-Channel Junction Silicon FET
Impedance Converter Applications
Applications
• Low-frequency amplifier, analog switch, constant current source.
Features
• Ultrasmall-sized package permitting 2SK2170 applied sets to be made small and slim.
Specificat |
Sanyo Semicon Device |
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5 | 2SK2171 | N-Channel Junction Silicon FET Ordering number:ENN4871
N-Channel Junction Silicon FET
2SK2171
High-Frequency, Low-Frequency Amplifier Analog Switch Applications
Features
· Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.
Package Dimensions
unit:mm 2125
[2SK2171]
4.5 1.6
1.5
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Sanyo Semicon Device |
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4 | 2SK2173 | Silicon N Channel MOS Type Field Effect Transistor 2SK2173
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2173
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 40 |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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