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Datasheet 2SK208 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | 2SK208 | Silicon N Channel Junction Type Field Effect Transistor 2SK208
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK208
General Purpose and Impedance Converter and Condenser Microphone Applications
• High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) ( |
 Toshiba Semiconductor |
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| 12 | 2SK2080-01 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2080-01
DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching regulators ·UPS ·DC-DC Converters ·General purpose power amplifier
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 Inchange Semiconductor |
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| 11 | 2SK2080-01R | N-CHANNEL SILICON POWER MOS-FET |
 Fuji Electric |
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| 10 | 2SK2081-01 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2081-01
DESCRIPTION ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching regulators ·UPS ·DC-DC Converters ·General purpose power amplifier
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Inchange Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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