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Datasheet 2SK198 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | 2SK198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK198
Silicon N-Channel Junction FET
For low-frequency amplification
2.8 –0.3
+0.2
unit: mm
0.65±0.15
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/mag |
 Panasonic Semiconductor |
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| 13 | 2SK198 | For Low-Frequency Amplification Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t |
Panasonic Semiconductor |
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| 12 | 2SK1981-01 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
isc Product Specification
2SK1981-01
APPLICATIONS ·Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VAL |
 Inchange Semiconductor |
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| 11 | 2SK1981-01 | N-channel MOS-FET 2SK1981-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
500V
0,76Ω
10A
80W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Pur |
 Fuji Electric |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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