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Datasheet 2SK184 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2SK184 | N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184
2SK184
Low Noise Audio Amplifier Applications
Unit: mm
· High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, R |
 Toshiba Semiconductor |
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| 7 | 2SK1840 | Analog Switch Applications Ordering number:EN4635
N-Channel Enhancement Silicon MOSFET
2SK1840
Analog Switch Applications
Features
· Largeyfs. · Enhancement type.
· Low ON resistance.
Package Dimensions
unit:mm 2024B
[2SK1840]
0.4 3
0.16
0 to 0.1
0.5 1.5 0.5 2.5
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute |
 Sanyo Semicon Device |
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| 6 | 2SK1841 | Very High-Speed Switching/ Analog Switch Applications Ordering number:EN4636
N-Channel Enhancement Silicon MOSFET
2SK1841
Ultrahigh-Speed Switching, Analog Switch Applications
Features
· Largeyfs. · Enhancement type.
· Low ON resistance.
Package Dimensions
unit:mm 2040A
[2SK1841]
4.0
2.2
0.6 1.8
15.0 3.0
0.4 0.5
0.4 0.4
123 1.3 1.3
0.7 |
Sanyo Semicon Device |
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| 5 | 2SK1842 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK1842
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor
0.65±0.15
+0.2
unit: mm
0.65±0.15
2.8 –0.3
1.5 –0.05
+0.25
s Features
q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Cr |
 Panasonic Semiconductor |
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