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Datasheet 2SK1835 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SK1835 | Silicon N-Channel MOS FET 2SK1835
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator
Outline and Equivalent Circuit
TO-3P
D
G
1 2 3 1. Gate 2. D |
Hitachi Semiconductor |
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1 | 2SK1835 | Silicon N Channel MOS FET 2SK1835
Silicon N Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) |
Renesas |
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Número de pieza | Descripción | Fabricantes | |
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