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Datasheet 2SK1835 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 2SK1835   Silicon N-Channel MOS FET

2SK1835 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. D
Hitachi Semiconductor
Hitachi Semiconductor
datasheet 2SK1835 pdf
1 2SK1835   Silicon N Channel MOS FET

2SK1835 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
Renesas
Renesas
datasheet 2SK1835 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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