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Datasheet 2SK183 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | 2SK183 | (2SK180 - 2SK183) Power FET |
 Yoshino International |
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| 15 | 2SK1830 | N CHANNEL MS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1830
High Speed Switching Applications Analog Switch Applications
• 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package
Marking
Equivalent Circuit
2SK1830
Unit: mm
Ab |
 Toshiba Semiconductor |
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| 14 | 2SK1831 | Silicon N-Channel MOS FET 2SK1831, 2SK1832
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. So |
 Hitachi Semiconductor |
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| 13 | 2SK1832 | Silicon N-Channel MOS FET 2SK1831, 2SK1832
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. So |
Hitachi Semiconductor |
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