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Datasheet 2SK1809 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK1809 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Fast Switching Speed ·Low on-resistance ·For switchinggregulator,DC-DC Converter
isc Product Specification
2SK1809
APPLICATIONS ·High speed power switch |
 Inchange Semiconductor |
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| 1 | 2SK1809 | Silicon N-Channel MOS FET 2SK1809
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Sourc |
 Hitachi Semiconductor |
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