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Toshiba 2SK1601
Power Field-Effect Transistor, 3A I(D), 900V, 6.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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Datasheet 2SK1601 Equivalent ( PDF ) - MOSFET

P/N Descripción Fabr. PDF
2SK1601 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1601 DESCRIPTION ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS
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NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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