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Datasheet 2SK1365 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SK1365 | N-CHANNEL MOS TYPE TRANSISTOR 2SK1365
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1365
Switching Power Supply Applications
z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (VDS = |
Toshiba Semiconductor |
2SK1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SK146 | (2SKxxx) Dual Transistors |
Toshiba |
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2SK105 | N-Channel FET |
NEC |
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2SK125 | Silicon N-Channel Junction FET |
Sony Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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