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Datasheet 2SK136 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SK136 | SI N CHANNEL JUNCTION |
 Panasonic Semiconductor |
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| 2 | 2SK1363 | Silicon N-Channel MOS Type / High Speed / High Current Switching Applications |
 Toshiba |
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| 1 | 2SK1365 | N-CHANNEL MOS TYPE TRANSISTOR 2SK1365
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1365
Switching Power Supply Applications
z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (VDS = |
 Toshiba Semiconductor |
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