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Datasheet 2SJ552S Equivalent ( PDF ) - Data |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | 2SJ552S | Silicon P Channel MOS FET High Speed Power Switching 2SJ552(L),2SJ552(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-651B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.042 Ω typ. Low drive current. 4V gate drive devices. High speed switching.
Outline
LDPAK
4 D 1 G 1 4
2
3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SJ552(L),2SJ552(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage
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![]() Hitachi Semiconductor |
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2 | 2SJ552S | P-Channel MOSFE, Transistor 2SJ552(L), 2SJ552(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0899-0400 (Previous: ADE-208-651B)
Rev.4.00 Sep 07, 2005
Features
Low on-resistance RDS (on) = 0.042 Ω typ.
Low drive current. 4 V gate drive devices. High speed switching.
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
RENESAS Package code: PRSS0004AE-B (Package name: LDP
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![]() Renesas |
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2SJ Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SJ0536 | Silicon P-Channel MOS FET
Silicon MOS FETs (Small Signal)
2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.) For switching
2.1±0.1 0.425 1.25±0.1 0.425
unit: mm
q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape, magazine pa
| ![]() Panasonic Semiconductor |
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2 | 2SJ103 | P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)
2SJ103
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ103
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
· · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270
| ![]() Toshiba Semiconductor |
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3 | 2SJ104 | Silicon P Channel Junction Type Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ104
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ104
Unit: mm
· High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = 5 mA) · Complimentary
| ![]() Toshiba Semiconductor |
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4 | 2SJ105 | Silicon P Channel Junction Type Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ105
Unit: mm
· High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · Low RDS (ON): RDS (ON
| ![]() Toshiba Semiconductor |
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5 | 2SJ106 | Silicon P Channel Junction Type Field Effect Transistor
2SJ106
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ106
Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
Unit: mm
High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max)
| ![]() Toshiba Semiconductor |
![]() |
6 | 2SJ107 | Silicon P Channel Junction Type Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ107
Unit: mm
High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) Low RDS (ON): RDS (ON) = 40 Ω (typ.) Small package
Complemen
| ![]() Toshiba Semiconductor |
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7 | 2SJ108 | Silicon P Channel Junction Type Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ108
2SJ108
Low Noise Audio Amplifier Applications
Unit: mm
· Recommended for first stages of EQ amplifiers and MC head amplifiers.
· High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
· Low noise: En = 0.95
| ![]() Toshiba Semiconductor |
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