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Datasheet 2SJ526 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SJ526 | Silicon P Channel MOS FET High Speed Power Switching 2SJ526
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-579B (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SJ526 |  Hitachi Semiconductor | data |
2SJ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SJ0536 | Silicon P-Channel MOS FET Silicon MOS FETs (Small Signal)
2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.) For switching
2.1±0.1 0.425 1.25±0.1 0.425
unit: mm
q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine pac  Panasonic Semiconductor data | | |
| 2 | 2SJ103 | P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) 2SJ103
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ103
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
· · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270  Toshiba Semiconductor amplifier | | |
| 3 | 2SJ104 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ104
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ104
Unit: mm
· High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA) · Complimenta Toshiba Semiconductor transistor | | |
| 4 | 2SJ105 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ105
Unit: mm
· High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · Low RDS (ON): RDS (ON Toshiba Semiconductor transistor | | |
| 5 | 2SJ106 | Silicon P Channel Junction Type Field Effect Transistor 2SJ106
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ106
Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
Unit: mm
• High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA Toshiba Semiconductor transistor | | |
| 6 | 2SJ107 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ107
Unit: mm
• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.) • Small package
� Toshiba Semiconductor transistor | | |
| 7 | 2SJ108 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ108
2SJ108
Low Noise Audio Amplifier Applications
Unit: mm
· Recommended for first stages of EQ amplifiers and MC head amplifiers.
· High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA)
· Low noise: En = 0 Toshiba Semiconductor transistor | | |
| 8 | 2SJ109 | P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS) Toshiba Semiconductor amplifier | | |
| 9 | 2SJ112 | MOS FET ETC data | |
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