Datasheet 2SJ387S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SJ387S	Silicon P-Channel MOS FET 2SJ387(L), 2SJ387(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain	Hitachi Semiconductor

2SJ3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SJ330	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	NEC
2SJ356	P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance an	NEC
2SJ377	P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ REALY DRIVE/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Datasheet.es 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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