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Datasheet 2SD897 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SD897 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD897
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 1A ·Built-in Damper Diode APPLICATIONS ·Designed for use in color TV deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PA
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| 2SD897A | POWER TRANSISTORS(1.5A/1500V/50W) A
A
A
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2SD8 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SD813 | SI NPN EPITAXIAL PLANAR
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| 2SD814 | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
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| 2SD814A | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
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| 2SD820 | SILICON DIFFUSED POWER TRANSISTOR
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| 2SD822 | NPN SILICON POWER TRANSISTOR
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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| P/N | Descripción | Fabr. | |
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