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Datasheet 2SD879 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SD879 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 3.0A ·Low Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 60mA（Pulse） ·Excellent Linearity of hFE in The Region From Low
Current to High Current.
APPLICATIONS ·In applications where tw |
 Inchange Semiconductor |
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| 2 | 2SD879 | 1.5V/ 3V Strobe Applications Ordering number:EN550F
NPN Epitaxial Planar Silicon Transistor
2SD879
1.5V, 3V Strobe Applications
Features
· In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
· The charge time is approximately 1 second faster than that of germanium transistors.
· Less po |
 Sanyo Semicon Device |
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| 1 | 2SD879 | NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SD879
NPN EPITAXIAL SILICON TRANSISTOR
1.5V, 3V STROBE APPLICATIONS
DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications.
FEATURES
* In applications where two NiCd batteries are used to provide 2.4V |
 Unisonic Technologies |
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