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Datasheet 2SD401A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SD401APOWER TRANSISTORS(2A/150V/25W)

A A A
Mospec Semiconductor
Mospec Semiconductor
transistor
22SD401A(2SD401A / 2SD402A) Color TV Vertical Deflection Output

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c
ETC
ETC
transistor
32SD401A(2SD401A / 2SD402A) VERTICAL DEFLECTION OUTPUT FOR COLOR TV PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR

www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/
NEC
NEC
transistor
42SD401ASILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB546A ·Collector current IC=2A ·Collector-collector voltage:VCEO=150V(Min) APPLICATIONS ·For use in general purpose power amplifier
SavantIC
SavantIC
transistor
52SD401AComplementary Silicon Power Ttransistors

TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Ttransistors ( Ta = 25 C) DESCRIPTION O 2SB546A / 2SD401A The 2SB546A and 2SD401A are high voltage triple diffused silicon transistors, These devices are designed for use in line-operated color TV vertical defiection of co
TGS
TGS
transistor


2SD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
12SD0592ASilicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage V
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0592A pdf
22SD0601Silicon NPN epitaxial planer type

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0601 pdf
32SD0601ASilicon NPN epitaxial planer type Transistor

Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0601A pdf
42SD0602Silicon NPN epitaxial planer type

Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0602 pdf
52SD0602ASilicon NPN epitaxial planer type

Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0602A pdf
62SD0638Silicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitt
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0638 pdf
72SD0662Silicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT •
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0662 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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