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Datasheet 2SD400 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SD400PNP / NPN Epitaxial Planar Silicon Transistors

Ordering number : EN0199 2SB544 / 2SD400 Preliminary SANYO Semiconductors DATA SHEET 2SB544 / 2SD400 PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Electronic Governor Applications Specifications ( ) : 2SB544 Absolute Maximum Ratings at Ta=25°C Parameter Collect
Sanyo Semicon Device
Sanyo Semicon Device
transistor
22SD400NPN Transistor

2SD400 TO-92MOD Transistor (NPN) 1. EMITTER 2. COLLECTOR 3. BASE 0.900 1.100 8.400 8.800 TO-92MOD 5.800 6.200 1 2 3 Features — 0.400 0.600 13.800 14.200 Low-Frequency power Amp, Electronic Governor Applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ T
LGE
LGE
transistor
32SD400SILICON NPN TRANSISTOR

2SD400 TO-92MOD Transistor (NPN) 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE Features — Low-Frequency power Amp, Electronic Governor Applications TO-92MOD 5.800 6.200 0.400 0.600 0.900 1.100 8.400 8.800 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ
LZG
LZG
transistor
42SD400NPN Transistor

YUKUTO SEMICONDUCTOR 2SD400 FEATURES Power dissipation PCM: 900 mW (TA=25℃) TRANSISTOR (NPN) Silicon Transistor TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current ICM: 1 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
Yukuto
Yukuto
transistor
52SD400Silicon NPN transistor

2SD400(BR3DG400L) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92LM 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92LM Plastic Package. 特征 / Features 高电压,低电流。 High Voltage ,low. Current. 用途 / Applications 用于低频功率放大及电子自�
Blue Rocket Electronics
Blue Rocket Electronics
transistor


2SD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
12SD0592ASilicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage V
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0592A pdf
22SD0601Silicon NPN epitaxial planer type

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0601 pdf
32SD0601ASilicon NPN epitaxial planer type Transistor

Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0601A pdf
42SD0602Silicon NPN epitaxial planer type

Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0602 pdf
52SD0602ASilicon NPN epitaxial planer type

Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0602A pdf
62SD0638Silicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitt
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0638 pdf
72SD0662Silicon NPN epitaxial planar type

www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT •
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD0662 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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