Datasheet 2SD2642 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
2	2SD2642	Silicon NPN Transistor Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V 13.0min B (7 0 Ω ) E Si	Sanken Electric
1	2SD2642	Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2642 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 110V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max)@ (IC= 5A	Inchange Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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