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Datasheet 2SD2449 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD2449 | Silicon NPN Triple Diffused Type TRANSISTOR 2SD2449
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2449
Power Amplifier Applications
Unit: mm
• High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitt |
 Toshiba Semiconductor |
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| 1 | 2SD2449 | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD2449
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·High DC Current Gain: hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage: VCE(sat)= 3.0V(Max)@ (IC= 8A |
 Inchange Semiconductor |
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