| P/N |
Descripción |
Fabr. |
PDF |
|
2SD235 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SD235
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
!
Complement to 2SB435
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 40 5 3 25 150 -50~150 Unit V V
|
 |
 |
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD235
DESCRIPTION ·With TO-220 package ·Complement to type 2SB435 APPLICATIONS ·For low frequency power amplifier and switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Co
|
 |
|
|
2SD2351 |
General Purpose Transistor (50V/ 0.15A)
2SD2707 , 2SD2654 , 2SD2351 , 2SD2226K , 2SD2227S
Transistors
General Purpose Transistor (50V, 0.15A)
2SD2707 , 2SD2654 , 2SD2351 , 2SD2226K , 2SD2227S
zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC, IB=50mA, 5mA)
zExternal dimensions (Unit : mm)
2SD2707
0.2
1.2 0.32
1.2 0.8
(2) (3) (1)
0.2
0.4 0.4 0.8
|
 |
|
(2SD2xxx) General Purpose Transistor (50V/ 0.15A)
2SD2707 , 2SD2654 , 2SD2351 , 2SD2226K , 2SD2227S
Transistors
General Purpose Transistor (50V, 0.15A)
2SD2707 , 2SD2654 , 2SD2351 , 2SD2226K , 2SD2227S
zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC, IB=50mA, 5mA)
zExternal dimensions (Unit : mm)
2SD2707
0.2
1.2 0.32
1.2 0.8
(2) (3) (1)
0.2
0.4 0.4 0.8
|
|
|
(2SDxxxx) MEDIUM POWER TRANSISTOR
|
|
|
