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Datasheet 2SD2250 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SD2250 | Silicon NPN triple diffusion planar type Darlington(For power amplification) Power Transistors
2SD2250
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1490
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emit |
 Panasonic Semiconductor |
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| 2 | 2SD2250 | Silicon PNP epitaxial planar type Darlington(For power amplification) Power Transistors
2SD2250
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1490
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emit |
Panasonic Semiconductor |
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| 1 | 2SD2250 | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD2250
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max)@ (IC= 6A |
 INCHANGE |
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