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Datasheet 2SD2061 Equivalent ( PDF ) - Transistor |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | 2SD2061 | Power Transistor(120V/ 7A) Transistors
2SD1957 2SD2061
(94L-919 D301)
(94L-1016-D304)
315
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![]() ROHM Semiconductor |
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2 | 2SD2061 | Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2061
TRANSISTOR (NPN)
TO-220F
1. BASE
FEATURES - Low saturation voltage - Excellent DC current gain characteristice
2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC
Paramenter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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![]() Jiangsu Changjiang Electronics |
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3 | 2SD2061 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2061
DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol
Absolu
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![]() SavantIC |
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2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SD0592A | 50V 1A / Silicon NPN Transistor
1. Large collector power dissipation PC 2. Low collector-emitter saturation voltage VCE(sat) 3. For low-frequency output amplification 4. Complementary to 2SB0621A (2SB621A)
| ![]() Panasonic Semiconductor |
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2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
1. For general amplification Complementary to 2SB709A 2. High foward current transfer ratio hFE. 3. Low collector to emitter saturation voltage VCE(sat). 4 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
| ![]() Panasonic Semiconductor |
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3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
| ![]() Panasonic Semiconductor |
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4 | 2SD0602 | Silicon NPN epitaxial planer type Transistor
Low collector to emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
| ![]() Panasonic Semiconductor |
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5 | 2SD0602A | Silicon NPN Transistor
1. For general amplification Complementary to 2SB0710A I 2. Low collector to emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
| ![]() Panasonic Semiconductor |
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6 | 2SD0638 | NPN epitaxial planar type Transistor
1. For medium-power general amplification 2. Complementary to 2SB0643 (2SB643) 3. Low collector-emitter saturation voltage VCE(sat) 4. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
| ![]() Panasonic Semiconductor |
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7 | 2SD0662 | Silicon NPN epitaxial planar type
1. For high breakdown voltage general amplification 2. High collector-emitter voltage (Base open) VCEO 3. High transition frequency fT 4. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
| ![]() Panasonic Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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