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Datasheet 2SD1758 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SD1758 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1758
DESCRIPTION ·Large current capacitance ·Low Vce(sat) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor
drive |
 Inchange Semiconductor |
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| 4 | 2SD1758 | PNP Transistor RoHS 2SD1758
2SD1758 TRANSISTOR (PNP)
TO-252-2
DFEATURES TPower dissipation
.,LPCM:
2 W (Tamb=25℃)
Collector current
ICM: 2 A Collector-base voltage
OV(BR)CBO: 40 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
1. BASE 2. COLLECTOR 3. EMITTER
1 23
ICELECTR |
 WEJ |
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| 3 | 2SD1758 | Medium Power Transistor Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240
Structure Epitaxial planar type NPN silicon transistor
0.5±0.1
Dimensions (Unit : mm)
2SD1766
4.5+−00..21 |
 ROHM Semiconductor |
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| 2 | 2SD1758 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-252-2 Plastic-Encapsulated Transistors
2SD1758
TO-252-2
TRANSISTOR (PNP)
FEATURES Power dissipation PCM: 2 W (Tamb=25℃)
1. BASE
2. COLLECTOR
3. EMITTER
Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and st |
 TRANSYS |
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