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Datasheet 2SD1670 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SD1670 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1670
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 10A
APPLICATIONS ·For low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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2SD1 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SD1000 | NPN POWER TRANSISTOR / MINI MOLD
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| 2SD1001 | NPN SILICON EPITAXIAL TRANSISTOR
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| 2SD1005 | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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| 2SD1006 | NPN Silicon Type Transistor
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| 2SD1010 | Silicon NPN epitaxial planer type(For low-frequency amplification)
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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| P/N | Descripción | Fabr. | |
| 2N3904 | NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects. |
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