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Datasheet 2SD1314 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD1314 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1313
DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min) ·High Speed Switching ·Low Collector Saturation Voltage
APPLICATIONS ·High power amplifier applicatio |
 Inchange Semiconductor |
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| 1 | 2SD1314 | NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) 2SD1314
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1314
Unit: mm
High Power Switching Applications Motor Control Applications
• • •
High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) Low saturation voltage: VCE (sat) |
 Toshiba Semiconductor |
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