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Datasheet 2SD1269 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SD1269 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1269
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB944
APPLICATIONS ·De |
 Inchange Semiconductor |
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| 2 | 2SD1269 | Silicon NPN epitaxial planar type(For power switching) Power Transistors
2SD1269
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB944
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio |
 Panasonic Semiconductor |
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| 1 | 2SD1269 | Silicon PNP epitaxial planar type(For power switching) Power Transistors
2SD1269
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB944
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio |
Panasonic Semiconductor |
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