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Datasheet 2SD1260 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SD1260 | Silicon NPN triple diffusion planar type Darlington(For power amplification) Power Transistors
2SD1260, 2SD1260A
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB937 and 2SB937A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling d |
 Panasonic Semiconductor |
 |
| 3 | 2SD1260 | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) Power Transistors
2SD1260, 2SD1260A
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB937 and 2SB937A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling d |
Panasonic Semiconductor |
|
| 2 | 2SD1260A | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) Power Transistors
2SB937, 2SB937A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1260 and 2SD1260A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
q q q
High foward current transfer ratio hFE High-speed switching N type package ena |
Panasonic Semiconductor |
|
| 1 | 2SD1260A | Silicon NPN triple diffusion planar type Darlington(For power amplification) Power Transistors
2SB937, 2SB937A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1260 and 2SD1260A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
q q q
High foward current transfer ratio hFE High-speed switching N type package ena |
Panasonic Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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