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Datasheet 2SD1252 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SD1252 | Silicon NPN triple diffusion planar type(For power amplification) Power Transistors
2SD1252, 2SD1252A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB929 and 2SB929A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collecto |
 Panasonic Semiconductor |
 |
| 5 | 2SD1252 | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SD1252, 2SD1252A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB929 and 2SB929A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collecto |
Panasonic Semiconductor |
|
| 4 | 2SD1252 | Silicon NPN Triple Diffusion Junction Type SMD Type
Transistors
Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A
TO-252
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Power transistors.
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60 |
 Kexin |
|
| 3 | 2SD1252A | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB929, 2SB929A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplification Complementary to 2SD1252 and 2SD1252A
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collect |
Panasonic Semiconductor |
|
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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