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Datasheet 2SD1250 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SD1250 | Silicon NPN triple diffusion planar type(For power amplification) Power Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
10.0±0.3
s Features
q q q
1.5±0.1
High forward current transfer ratio hFE wh |
 Panasonic Semiconductor |
 |
| 4 | 2SD1250 | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
10.0±0.3
s Features
q q q
1.5±0.1
High forward current transfer ratio hFE wh |
Panasonic Semiconductor |
|
| 3 | 2SD1250 | Silicon NPN Triple Diffusion Planar Type SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type 2SD1250
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
+0.2 9.70 -0.2 +0.15 0.50 -0.15
Low collector-emitter saturation voltage VCE(sat)
+0.1 0.80-0.1
0.127 max
2.3
+0.15 4. |
 Kexin |
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| 2 | 2SD1250A | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB928, 2SB928A
Silicon PNP epitaxial planar type
For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
10.0±0.3
1.5±0.1
10.5min.
q q q
High collector to emitter VCEO High collector powe |
Panasonic Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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