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Datasheet 2SD1221 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD1221 | Silicon NPN Diffused Type Transistor TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)
2SD1221
2SD1221
Audio Frequency Power Amplifier Application
Unit: mm
• Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
• High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906
A |
 Toshiba Semiconductor |
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| 1 | 2SD1221 | NPN Transistors SMD Type
Transistors
NPN Transistors 2SD1221
■ Features
● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SB906
+9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1 -0.1
0.5 |
 KEXIN |
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