Datasheet 2SD111 Equivalent ( PDF ) - Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD111 DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1110 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB849 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base

Ordering number:EN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC Current Gain (5000 or greater). · Large current capacity and wide ASO. · Low saturation voltage (VCE(sat)=0.8V typ). Package Dimensions unit:mm 2003B [2SD1111] 5.0 4.0 4.0 0.45

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1113 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 4A APPLICATIONS ·Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO

2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Not