Datasheet 2SC606 Equivalent ( PDF ) - Transistor

2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Power Amplifier Applications Driver Stage Amplifier Applications High-transition frequency: fT = 100 MH- (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage tem

2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications DC-DC Converter Applications High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) 0.95 0.95 2.9±0.2 1.9±0.2 Unit: mm +0.2 2.8-0.3 +0.2 1.6-0.1 Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 0.2 μs (typ) 1 2 3 Characteristic Collector-base voltage Collecto

Ordering number : ENA0270 2SC6064 2SC6064 Applications NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Pa