Renesas 2SC5508-T2B-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, NPN

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Datasheet 2SC5508 Equivalent ( PDF ) - Transistor

P/N	Descripción	Fabr.	PDF
2SC5508	NPN SILICON RF TRANSISTOR FOR LOW NOISE/ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA fT = 25 GH- technology
2SC5508	NPN SILICON RF TRANSISTOR Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GH- Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2
2SC5508-T2	NPN SILICON RF TRANSISTOR FOR LOW NOISE/ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA fT = 25 GH- technology

2SC5 Datasheet ( Hoja de datos ) - Resultados que coinciden

P/N	Descripción	Fabr.	PDF
2SC5000	NPN Transistor (POWER AMPLIFIER APPLICATIONS)
2SC5001	NPN Transistor
2SC5002	Silicon NPN Planar Transistor
2SC5003	Silicon NPN Planar Transistor
2SC5004	NPN SILICON EPITAXIAL TRANSISTOR
2SC2762	18V, 0.4A, NPN Transistor, Can type
2SV-09	9 positions / Screwless Terminal Blocks

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P/N	Descripción	Fabr.	PDF
2N3904	NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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