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Datasheet 2SC5480 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SC5480 | Silicon NPN Triple Diffused Horizntal Deflection Output 2SC5480
Silicon NPN Triple Diffused Horizntal Deflection Output
ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features
High breakdown voltage VCES = 1500 V Isolated package TO 3PFM Built-in damper diode
Outline
TO 3PFM
C 2
1 B
3 E
1
2 3
1. Base 2. Collector 3. Emitter
2SC5480
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Emitter to base voltage Collector cu
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| Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5480
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode
APPLICATIONS ·Designed for horizontal deflection output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Bas
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nuevas actualizaciones
| P/N | Descripción | Fabr. | |
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