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Toshiba 2SC5387
Power Bipolar Transistor, 10A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Datasheet 2SC5387 Equivalent ( PDF ) - Transistor

P/N Descripción Fabr. PDF
2SC5387 NPN TRIPLE DIFFUSED MESA TYPE

2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS - High Voltage - Low Saturation Voltage - High Speed : VCBO = 1500 V : VCE (sat) = 3 V (Max.) : tf = 0.15 μs (Typ.) Unit: mm - Collector Metal (Fin) is Fully Covered with Mold Resin. ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) C
Toshiba Semiconductor Toshiba Semiconductor 2SC5387 datasheet
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5387 DESCRIPTION ·High Breakdown Voltage: VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto
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P/N Descripción Fabr. PDF
2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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