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Datasheet 2SC5356 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SC5356 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5356
2SC5356
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
Unit: mm
Excellent switching times: tf = 0.5 μs (max) (IC = 1.2 A) High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A)
Absolute Maximum Ratings (Ta = 25°C)
Charac
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| Silicon NPN Triple Diffused Type SMD Type
Silicon NPN Triple Diffused Type 2SC5356
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A)
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0
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2SC5 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SC5000 | NPN Transistor (POWER AMPLIFIER APPLICATIONS)
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| 2SC5001 | NPN Transistor
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| 2SC5002 | Silicon NPN Planar Transistor
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| 2SC5003 | Silicon NPN Planar Transistor
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| 2SC5004 | NPN SILICON EPITAXIAL TRANSISTOR
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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nuevas actualizaciones
| P/N | Descripción | Fabr. | |
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