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Renesas 2SC5338-T1-AZ
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
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Datasheet 2SC5338 Equivalent ( PDF ) - Transistor

P/N Descripción Fabr. PDF
2SC5338 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE = 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such. FEATURES PACKAGE DIMENSION
NEC NEC 2SC5338 datasheet
NPN SILICON RF TRANSISTOR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Elect
Renesas Renesas 2SC5338 datasheet



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P/N Descripción Fabr. PDF
2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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