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Datasheet 2SC5265 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SC5265 | NPN Triple Diffused Planar Silicon Transistor Ordering number:EN5321
NPN Triple Diffused Planar Silicon Transistor
2SC5265
Inverter-controlled Lighting Applications
Features
· High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm
2079B
10.0 3.2
[2SC5265]
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2
0.7
14.0
0.75 1 23
Specifications
Absolute Ma
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| Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification 2SC5265
DESCRIPTION ·High Breakdown Voltage-(Vcb=1200V)
High Reliability Adoption of MBIT proces
APPLICATIONS ·Inverter-controlled Lighting
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltag
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2SC5 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SC5000 | NPN Transistor (POWER AMPLIFIER APPLICATIONS)
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| 2SC5001 | NPN Transistor
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| 2SC5002 | Silicon NPN Planar Transistor
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| 2SC5003 | Silicon NPN Planar Transistor
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| 2SC5004 | NPN SILICON EPITAXIAL TRANSISTOR
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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nuevas actualizaciones
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