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Datasheet 2SC5265 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SC5265 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification 2SC5265
DESCRIPTION ·High Breakdown Voltage-(Vcb=1200V)
High Reliability Adoption of MBIT proces
APPLICATIONS ·Inverter-controlled Lighting
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO |
Inchange Semiconductor |
|
1 | 2SC5265 | NPN Triple Diffused Planar Silicon Transistor Ordering number:EN5321
NPN Triple Diffused Planar Silicon Transistor
2SC5265
Inverter-controlled Lighting Applications
Features
· High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm
2079B
10.0 3.2
[2SC526 |
Sanyo Semicon Device |
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Número de pieza | Descripción | Fabricantes | |
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