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Datasheet 2SC5201 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SC5201 | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector curre
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2SC5 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SC5000 | NPN Transistor (POWER AMPLIFIER APPLICATIONS)
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| 2SC5001 | NPN Transistor
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| 2SC5002 | Silicon NPN Planar Transistor
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| 2SC5003 | Silicon NPN Planar Transistor
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| 2SC5004 | NPN SILICON EPITAXIAL TRANSISTOR
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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| P/N | Descripción | Fabr. | |
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