Datasheet 2SC5198 Equivalent ( PDF ) - Transistor

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base

NPN Silicon NPN Triple Diffused Transistor R 2SC5198 VCEO=140V (min) 2SA1941 70W RoHS APPLICATIONS Power Amplifier Applications FEATURES High collector voltage VCEO=140V (min) Complementary to 2SA1941 Recommended for 70-W high-fidelity audio frequency amplifier output RoHS product Package TO-247 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER 不ORDER MESSAGE不 Order codes Marking Halogen Fre

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5198 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION A

SEMICONDUCTOR 2SC5198B Series Silicon NPN triple diffusion planar transistor 10A, 140V, 100W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES High breakdown voltage, V CEO =140V (min) Complementary to 2SA1941B TO-3P package which can be installed to the heat sink with one screw 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6�