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Descripción |
Fabr. |
PDF |
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2SC5194 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
SILICON TRANSISTOR
2SC5194
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GH- Large Absolute Maximum Collector Current 4-Pin Compact Mini Mold Package
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.2
0.3 0.05
+0.1
NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GH-
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2SC5194-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
SILICON TRANSISTOR
2SC5194
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GH- Large Absolute Maximum Collector Current 4-Pin Compact Mini Mold Package
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.2
0.3 0.05
+0.1
NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GH-
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2SC5194-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
SILICON TRANSISTOR
2SC5194
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GH- Large Absolute Maximum Collector Current 4-Pin Compact Mini Mold Package
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.2
0.3 0.05
+0.1
NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GH-
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