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Descripción |
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2SC5193 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC5193
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collector Current IC = 100 mA
PACKAGE DRAWING (Units: mm)
2.1±0.1 1.25±0.
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2SC5193-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC5193
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collector Current IC = 100 mA
PACKAGE DRAWING (Units: mm)
2.1±0.1 1.25±0.
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2SC5193-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC5193
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collector Current IC = 100 mA
PACKAGE DRAWING (Units: mm)
2.1±0.1 1.25±0.
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